在晶振使用或者是晶振焊接過程中，都會遇到許許多多的問題,焊接問題有時候會焊接不上,晶振產(chǎn)品掛不住在板子上,渥焊,假焊都是有可能的.晶振焊接上去帶不動板子正常工作,又或者焊接過程中的失誤導致晶振在焊上板子之后偏差太大.
　　In the process of using crystal or crystal welding, there are many problems encountered. Welding problems sometimes cannot be soldered. Crystal products can't be hanged on the board. Soldering and false soldering are all possible. The normal operation of the plate, or the mistakes in the welding process, cause the crystal to deviate too much after welding the board.
　　在這里,泰河電子為大家整理了一份關于晶振產(chǎn)品的產(chǎn)品特性以及影響產(chǎn)品特性的因素,以供大家參考使用.喜歡的可以收藏起來后續(xù)再看.
Here, Taihe Electronics has compiled a product characteristic for the crystal product and factors affecting the product characteristics for your reference. You can collect it and follow it later.
　　首先是我們比較關心的常溫產(chǎn)品特性：常溫產(chǎn)品特性有時也稱為室溫產(chǎn)品特性，一般是指產(chǎn)品在環(huán)境溫度為25℃，相對濕度為50%左右時所測量出來的電性能參數(shù)，主要是頻率，電阻，激勵功率相關性及電容比等指標。
　　First of all, we are concerned about the characteristics of normal temperature products: normal temperature product characteristics are sometimes called room temperature product characteristics, generally refers to the electrical performance parameters measured when the product temperature is 25 ° C, relative humidity is about 50%, mainly frequency , resistance, excitation power correlation and capacitance ratio indicators.

　　常溫下石英晶振產(chǎn)品的頻率主要是觀察其穩(wěn)定性與一致性。穩(wěn)定性是相對于單個產(chǎn)品而言，一方面要求產(chǎn)品在測試儀上重復測試時，頻率變化量要小，好產(chǎn)品頻率變化量可以小于±0.5ppm，與產(chǎn)品頻率高低及TS大小有關，一般情況下，頻率越高變化量越大，TS越大變化量越大，測量指標一般是FL，若是FR則不存在TS的問題；另一方面要求產(chǎn)品在電路中工作時不出現(xiàn)頻率漂移，也就是說產(chǎn)品頻率不要跑到幾百甚至幾千ppm去，一般情況下只有高頻（27M以上）產(chǎn)品才會有這個問題，尤其是3RD產(chǎn)品。
　　The frequency of the product at room temperature is mainly to observe its stability and consistency. The stability is relative to a single product. On the one hand, when the product is repeatedly tested on the tester, the frequency change is small, and the good product frequency variation can be less than ±0.5ppm, which is related to the product frequency and TS size. The higher the frequency, the larger the amount of change, the larger the TS is, the larger the change is. The measurement index is generally FL. If it is FR, there is no TS problem. On the other hand, the product does not have frequency drift when working in the circuit. Say that the product frequency should not go to hundreds or even thousands of ppm. Under normal circumstances, only high frequency (27M or more) products will have this problem, especially 3RD products.
如果頻率不穩(wěn)定，偏移的幅度上百ppm或同時伴有C0偏小現(xiàn)象，應考慮膠點是否松動。
　　If the frequency is unstable, the amplitude of the offset is hundreds of ppm or accompanied by a small C0 phenomenon, it should be considered whether the glue point is loose.
　　對于一條相對成熟的生產(chǎn)線來說，產(chǎn)品在常溫下的頻率穩(wěn)定性一般不會出現(xiàn)問題，比較常見的是產(chǎn)品的一致性（散差），尤其是高頻的小公差產(chǎn)品一致性往往不如人意。一致性考慮是多個產(chǎn)品的頻率公差，在測試系統(tǒng)中，觀察FL的正態(tài)分布圖可以很直觀的了解產(chǎn)品的一致，也可以使用儀器測試系統(tǒng)中的CPK計算功能，通過CPK來衡量產(chǎn)品的一致性。

　　For a relatively mature production line, the frequency stability of the product at normal temperature is generally not a problem, the more common is the consistency of the product (difference), especially the high-frequency small tolerance product consistency is often unsatisfactory. Consistency consideration is the frequency tolerance of multiple products. In the test system, observing the normal distribution map of FL can be very intuitive to understand the consistency of the product, and can also use the CPK calculation function in the instrument test system to measure the product by CPK. consistency.

　　因烤膠時間或溫度不正確也會造成頻率散差大，只是出現(xiàn)的概率較小，芯片原因造成頻率散差大一般在微調工序就能反映出來。為比較及時的了解頻率的一致性，應在封焊工序增加一個抽檢工站，以考查微調封焊后狀況，尤其能較早發(fā)現(xiàn)微調范圍或微調人員的個體差異。分析原因時一定要考慮各批次產(chǎn)品在制程中流動的時間是否大致相同，且越短越好，這一點對于產(chǎn)品的DLD特性也影響很大。
　　Due to the incorrect baking time or temperature, the frequency dispersion will be large, but the probability of occurrence is small. The large dispersion of the frequency caused by the chip is generally reflected in the fine adjustment process. In order to understand the consistency of frequency in a timely manner, a sampling station should be added in the sealing welding process to check the condition of fine-tuning after welding, especially to find the fine-tuning range or fine-tune the individual difference. When analyzing the cause, it must be considered whether the time of each batch of products flowing in the process is about the same, and the shorter the better, this also has a great impact on the DLD characteristics of the product.
　　常溫電阻特性主要是中心值與穩(wěn)定性。電阻中心值與控制上限的距離與產(chǎn)品的合格率息息相關，在測試系統(tǒng)中可以用平均值代替中心值，一般要求產(chǎn)品平均值是控制上限的50%左右。做制程改善時重點關注點膠與污染。
　　The room temperature resistance characteristics are mainly the center value and stability. The distance between the resistance center value and the control upper limit is closely related to the product qualification rate. In the test system, the average value can be used instead of the center value. Generally, the product average value is about 50% of the upper control limit. Focus on dispensing and contamination when making process improvements.
芯片不良在電阻大這一不良項中出現(xiàn)次數(shù)會比較多，特別是新的芯片供貨商或開發(fā)新頻點時。
Chip failures occur more frequently in the case of large resistors, especially when new chip suppliers or new frequency points are developed.
　　通常產(chǎn)品在常溫下的電阻要比頻率更穩(wěn)定，其變化量更容易控制在±0.5Ω以內，一般只有高頻產(chǎn)品或3RD產(chǎn)品會出現(xiàn)此類問題，如果產(chǎn)品有此類現(xiàn)象往往歸在可靠性中分析。
　　Generally, the resistance of the product at room temperature is more stable than the frequency, and the amount of change is more easily controlled within ±0.5 Ω. Generally, only high-frequency products or 3RD products may have such problems. If the product has such a phenomenon, it is often attributed to reliability. In the analysis.
　激勵功率相關性主要是考察產(chǎn)品在不同激勵功率下的頻率或電阻及其變化量，目前SMD產(chǎn)品設定的最小激勵功率一般是0.01uW，最大激勵功率一般是200 uW，20M以上的優(yōu)良產(chǎn)品DLD2和FDLD應小于1，12M左右的低頻產(chǎn)品DLD2特性稍差，但其中心值也應低于8Ω。產(chǎn)品DLD出問題時的分析圖請參照產(chǎn)品電阻大的分析圖，但有一點應特別引起重視—產(chǎn)品封焊前在制程中的流動速度越快越好，各工序產(chǎn)出應盡量平衡，減少物料在各工序等待時間。
　　The excitation power correlation is mainly to investigate the frequency or resistance of the product under different excitation power and its variation. At present, the minimum excitation power set by SMD products is generally 0.01uW, the maximum excitation power is generally 200 uW, and the excellent product DLD2 above 20M. The low-frequency product DLD2 with FDLD should be less than 1,12M is slightly inferior, but its center value should also be lower than 8Ω. For the analysis of the product DLD, please refer to the analysis chart of the product resistance, but one point should be paid special attention. The faster the flow rate in the process before the product is sealed, the better the output should be balanced and the materials should be reduced. Waiting time in each process.
DLD2：電阻激勵功率相關性（RRMAX — RRMIN）。單位：歐姆Ω
RLD2：激勵功率范圍內的最大電阻。
FDLD：頻率激勵功率相關性（FLMAX ——FL MIN）
DELF（FLR）：串并聯(lián)間隔（FL—Fr）
DLDH2：不同激勵功率下的電阻遲滯（同一激勵功率點前后兩次測試的ESR最大差值）。
　　其次是貼片晶振產(chǎn)品的溫度特性：產(chǎn)品的溫度特性是指產(chǎn)品在不同溫度下的電性能變化情況，優(yōu)良產(chǎn)品的溫度特性呈光滑的三次曲線（AT切）或二次曲線（BT切），與理論曲線非常相似。主要影響因素是芯片的切型與切割角度，在石英芯片這一節(jié)中已有相關介紹，另外芯片加工過程的平面度（高頻）和修邊情況（低頻）也會影響產(chǎn)品的溫度特性。制程中芯片污染，電極偏位等也會對產(chǎn)品的溫度特性造成影響。
　　再然就是產(chǎn)品的可靠性（信賴性）：產(chǎn)品的可靠性可以通俗的理解為：產(chǎn)品生產(chǎn)完成后，不會因常規(guī)的搬運，儲存而使其性能受影響，不會因客戶的焊接，清洗和封裝等各種使用條件而影響性能。產(chǎn)品的可靠性可以通過各種可靠性試驗來衡量，目前常見的可靠性試驗有：
高溫儲存試驗 125℃±10℃；1000H±24H
溫度循環(huán)試驗 T1 = -55℃±10℃ T2= 125℃±10℃；循環(huán)次數(shù)10次。（溫度轉換約30分鐘）
溫度沖擊試驗 T1 = -55℃±10℃ T2= 125℃±10℃；循環(huán)次數(shù)10次。（溫度轉換時間5秒）
恒溫恒濕試驗 TC 85±10℃ H 85% ；1000H±24H
可焊性（焊錫）試驗 230±10℃；3 s
耐焊接試驗 260±10℃；10 s
跌落試驗 75 cm；3 次。
振動試驗頻率10 Hz — 2000 Hz；振幅 1.5 mm；每方向 40 分鐘。
老化率試驗 TC 85±10℃；300 H
壽命試驗（MTBF）；85℃or125℃；1000H；利用公式及失效產(chǎn)品數(shù)計算出產(chǎn)品模擬壽命。
　　在以上十項試驗中，恒溫恒濕試驗主要考察產(chǎn)品儲存時會不會出現(xiàn)外觀變異，是否會影響焊接，可焊性（焊錫）試驗主要考察產(chǎn)品在客戶端使用時能否順利焊接到電路板上，只要原材料不出問題，產(chǎn)品在制程中不嚴重超溫，無嚴重污染就不會有問題。
　　其余試驗主要是通過對比試驗前后產(chǎn)品的電性能變化情況來衡量產(chǎn)品的可靠性，其中高溫儲存試驗，老化率試驗和壽命試驗考察產(chǎn)品的儲存條件與儲存時間；溫度循環(huán)試驗和溫度沖擊試驗考察產(chǎn)品在客戶端使用時對溫度變化的耐受情況。產(chǎn)品在制程中無明顯污染，銀層牢固，封焊時露點符合要求，檢漏無漏氣就能滿足要求。
　　跌落試驗考察產(chǎn)品受機械力沖擊時的耐受情況，跌落試驗不合格應分兩各情況來處理，一是芯片破裂造成不良（高頻），應檢查導電膠選用是否正確（較柔），底膠是否足夠，芯片在搭載時是否過低；另一各情況是脫膠，或稱膠點松動，應檢查烤膠工藝是否有問題，芯片上下膠量是否足夠，上下膠連接處膠量是否飽滿。

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